NTE3031 Phototransistor Detector NPN-Si, Visible & IR
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead temperature (During Soldering, 3 min), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Static Characteristics Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Saturation Voltage Optical Characteristics Light Current Photo Current Rise Time IL tr VCE = 5V, RL = 100, Note 1 RL = 1000, VCC = 5V, IL = 1mA (Peak) 1 - - 6 - - mA s ID VCE = 10V - 30 5 - - - - 0.2 100 - - - nA V V V V(BR)CEO IC = 100A V(BR)ECO IE = 100A VCE(sat) IC = 0.4mA Symbol Test Conditions Min Typ Max Unit
Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a tungsten source at a color temperature of 2875 K. Note 2. Angular response is defined as the total included angle between the half sensitivity points and assuming a point source.
.210 (5.33) Dia .155 (3.94) Dia Window on Center Line .184 (4.67) Dia
.208 (5.28) .150 (3.81) Die Seating Plane .021 (0.53) .500 (12.7) Min
.018 (0.45) Dia Typ
.040 (1.02) .100 (2.54) Dia 45
Collector
Emitter Base
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